Paper
22 October 2003 Influence of proton irradiation on optical characteristics of LiNbO3:Cu wafers
Slawomir Maksymilian Kaczmarek, Andrzej L. Bajor, Jolanta Wojtkowska, Zbigniew Moroz, Miroslaw Kwasny
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Abstract
Optical homogeneity (birefringence and birefringence dispersion mapping, transmission and additional absorption) was investigated on the entire areas of LiNbO3 wafers doped with Cu ions and irradiated with protons of fluencies ranging between 1012 and 1016 cm-2. The birefringence dispersion studies have revealed a considerable influence of protons on LiNbO3:Cu optical inhomogeneity, whereas the same influence on undoped LiNb03 was much less significant. The spectroscopic studies have revealed different mechanisms of defect formation depending on doses of protons. Also the secondary electrons generated by proton irradiation are believed to decrease the optical homogeneity by decreasing crystal's conductivity and generation of the color centers.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Slawomir Maksymilian Kaczmarek, Andrzej L. Bajor, Jolanta Wojtkowska, Zbigniew Moroz, and Miroslaw Kwasny "Influence of proton irradiation on optical characteristics of LiNbO3:Cu wafers", Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); https://doi.org/10.1117/12.518746
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KEYWORDS
Crystals

Absorption

Semiconducting wafers

Birefringence

Copper

Electrons

Wafer-level optics

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