Characterization of wafer-level bonded hermetic packages using optical leak detection

Ani Duan; Kaiying Wang; Knut Aasmundtveit; Nils Hoivik

doi:10.1117/12.836183

24 August 2009 Characterization of wafer-level bonded hermetic packages using optical leak detection

Ani Duan, Kaiying Wang, Knut Aasmundtveit, Nils Hoivik

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73811Y (2009) https://doi.org/10.1117/12.836183
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

For MEMS devices required to be operated in a hermetic environment, one of the main reliability issues is related to the packaging methods applied. In this paper, an optical method for testing low volume hermetic cavities formed by anodic bonding between glass and SOI (silicon on insulator) wafer is presented. Several different cavity-geometry structures have been designed, fabricated and applied to monitor the hermeticity of wafer level anodic bonding. SOI wafer was used as the cap wafer on which the different-geometry structures were fabricated using standard MEMS technology. The test cavities were bonded using SOI wafers to glass wafers at 400C and 1000mbar pressure inside a vacuum bonding chamber. The bonding voltage varies from 200V to 600V. The bonding strength between glass and SOI wafer was mechanically tested using shear tester. The deformation amplitudes of the cavity cap surface were monitored by using an optical interferometer. The hermeticity of the glass-to-SOI wafer level bonding was characterized through observing the surface deformation in a 6 months period in atmospheric environment. We have observed a relatively stable micro vacuum-cavity.

Citation Download Citation

Ani Duan, Kaiying Wang, Knut Aasmundtveit, and Nils Hoivik "Characterization of wafer-level bonded hermetic packages using optical leak detection", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811Y (24 August 2009); https://doi.org/10.1117/12.836183

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