Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

L. Riuttanen; P. Kivisaari; O. Svensk; T. Vasara; P. Myllys; J. Oksanen; S. Suihkonen

doi:10.1117/12.2077549

13 March 2015 Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

L. Riuttanen, P. Kivisaari, O. Svensk, T. Vasara, P. Myllys, J. Oksanen, S. Suihkonen

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93632A (2015) https://doi.org/10.1117/12.2077549
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Due to their potential to improve the performance of light-emitting diodes (LEDs), novel device structures based on nanowires, surface plasmons, and large-area high-power devices have received increasing amount of interest. These structures are almost exclusively based on the double hetero junction (DHJ) structure, that has remained essentially unchanged for decades. In this work we study a III-nitride diffusion injected light-emitting diode (DILED), in which the active region is located outside the pn-junction and the excitation of the active region is based on bipolar diffusion of charge carriers. This unorthodox approach removes the need of placing the active region in the conventional current path and thus enabling carrier injection in device structures, which would be challenging to realize with the conventional DHJ design. The structure studied in this work is has 3 indium gallium nitride / gallium nitride (InGaN/GaN) quantum wells (QWs) under a GaN pn-junction. The QWs are grown at diferent growth temperatures for obtaining distinctive luminescence peaks. This allows to obtain knowledge on the carrier diffusion in the structure. When the device is biased, all QWs emit light indicating a significant diffusion current into the QW stack.

Citation Download Citation

L. Riuttanen, P. Kivisaari, O. Svensk, T. Vasara, P. Myllys, J. Oksanen, and S. Suihkonen "Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632A (13 March 2015); https://doi.org/10.1117/12.2077549

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