CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12905 > Article
Presentation
13 March 2024 Characterization of MOVPE grown InGaAs/GaAs semiconductor quantum dots as gain medium in edge emitting lasers
Philipp Noack, Nathalie Benzler, Sergej Vollmer, Michael Jetter, Peter Michler
Author Affiliations +
Proceedings Volume PC12905, Novel In-Plane Semiconductor Lasers XXIII; PC129050F (2024) https://doi.org/10.1117/12.3001593
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Semiconductor quantum dots (QDs) offer various unique properties that make them interesting candidates for the use as gain media in semiconductor laser diodes. MOVPE is used as the method of growth for the QD structures with high area density and vertically stacked QD layers. This leads to a broad gain spectrum, which enables laser devices with wide tuning ranges around 1300nm. We incorporate this active region into edge-emitting laser structures, for the characterization of optical gain and absorption properties, as well as the inner losses.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Philipp Noack, Nathalie Benzler, Sergej Vollmer, Michael Jetter, and Peter Michler "Characterization of MOVPE grown InGaAs/GaAs semiconductor quantum dots as gain medium in edge emitting lasers", Proc. SPIE PC12905, Novel In-Plane Semiconductor Lasers XXIII, PC129050F (13 March 2024); https://doi.org/10.1117/12.3001593
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Semiconductor lasers
Semiconductor quantum dots
Materials properties
Gallium arsenide
Indium gallium arsenide
Quantum confinement
Quantum wells
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top