Paper
3 May 1979 Measurement Of Electron Irradiation Damage To Thinned Fairchild And Texas Instruments Charge-Coupled Devices (CCDs)
J. P. Choisser, R. O. Ginaven, G. D. Hall, H. A. Naber, R. D. Smith II, E. A. Beaver, R. G. Hier
Author Affiliations +
Abstract
A Fairchild CCD211 (190X244 pixels) charge coupled device was thinned for photon and photoelectron rear-illumination experiments. Image smear due to injection of charge into the interline transfer registers was measured, and leakage current changes as a result of photoelectron irradiation were recorded. As expected, damage rates were less than 10-4 of those measured for front side irradiation. Similar damage data were taken at UCSD on the Texas Instrument 100X160 thinned array. Nearly identical damage rates were measured for the two arrays.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. Choisser, R. O. Ginaven, G. D. Hall, H. A. Naber, R. D. Smith II, E. A. Beaver, and R. G. Hier "Measurement Of Electron Irradiation Damage To Thinned Fairchild And Texas Instruments Charge-Coupled Devices (CCDs)", Proc. SPIE 0172, Instrumentation in Astronomy III, (3 May 1979); https://doi.org/10.1117/12.957088
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Cited by 4 scholarly publications.
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KEYWORDS
Charge-coupled devices

Diodes

Etching

Silicon

Sensors

Astronomy

Ultraviolet radiation

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