Intracavity Loss Modulation Of GalnAsP Lasers

D. Z. Tsang; J. N. Walpole; S. H. Groves; J. J. Hsieh; J. P. Donnelly

doi:10.1117/12.959957

29 July 1981 Intracavity Loss Modulation Of GalnAsP Lasers

D. Z. Tsang, J. N. Walpole, S. H. Groves, J. J. Hsieh, J. P. Donnelly

Proceedings Volume 0269, Integrated Optics I; (1981) https://doi.org/10.1117/12.959957
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

GaInAsP/InP diode lasers with a monolithically integrated electroabsorption modulator have been fabricated from a conventional double-heterostructure wafer. The additional intracavity loss produced by operating the modulator near maximum reverse bias increased the laser threshold by a factor of as much as 2.9 relative to the threshold with the modulator open-circuited. Large depth of modulation of the laser output at frequencies up to 2.5 GHz, the measurement system limit, has been achieved by repetitively Q-switching the laser.

Citation Download Citation

D. Z. Tsang, J. N. Walpole, S. H. Groves, J. J. Hsieh, and J. P. Donnelly "Intracavity Loss Modulation Of GalnAsP Lasers", Proc. SPIE 0269, Integrated Optics I, (29 July 1981); https://doi.org/10.1117/12.959957

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