Paper
29 January 1985 Planar And Channel Optical Waveguides Utilizing Silicon Technology
J. T. Boyd, R. W. Wu, D. E. Zelmon, A. Naumaan, H. A. Timlin, H. E. Jackson
Author Affiliations +
Proceedings Volume 0517, Integrated Optical Circuit Engineering I; (1985) https://doi.org/10.1117/12.945144
Event: 1984 Cambridge Symposium, 1984, Cambridge, United States
Abstract
Planar and channel optical waveguide structures formed on silicon substrates using the fabrication techniques of sputtering, thermal oxidation, and chemical vapor deposition are discussed. Losses in the various waveguide structures are reported. The use of polycrystalline silicon deposited by chemical vapor deposition onto any waveguide substrate to form integrated photodetector arrays is discussed. Laser recrystallization of the deposited silicon is used to allow fabrication of high quality devices. Measured values of photodiode reverse current of less than 10-12 amp and breakdown voltages of 40 volts are respectable values for small photodiodes incorporated into a dense array.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. T. Boyd, R. W. Wu, D. E. Zelmon, A. Naumaan, H. A. Timlin, and H. E. Jackson "Planar And Channel Optical Waveguides Utilizing Silicon Technology", Proc. SPIE 0517, Integrated Optical Circuit Engineering I, (29 January 1985); https://doi.org/10.1117/12.945144
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Cited by 6 scholarly publications.
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KEYWORDS
Silicon

Waveguides

Photodetectors

Semiconductor lasers

Refractive index

Channel waveguides

Annealing

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