Amorphous Silicon Image Pickup Tubes

S. Ishioka; C. Kusano; Y. Takasaki; Y, Shimomoto; T. Hirai

doi:10.1117/12.961080

12 March 1986 Amorphous Silicon Image Pickup Tubes

S. Ishioka, C. Kusano, Y. Takasaki, Y, Shimomoto, T. Hirai

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961080
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Reactively sputtered a-Si:H is used in a photoconductive target of an image pickup tube. When a-Si:H is used for a color imager, high resistivity and wide optical band gap are required. A blocking type target structure is effective in reducing dark current and producing rapid photo response. Low doping of boron into a-Si:H serves to increase both hole and electron mobilities. The imaging tube using this a-Si:H has high photosensitivity, high resolution, and no sticking or burning. By using high velocity electron beam for scanning, lag property is drastically improved.

Citation Download Citation

S. Ishioka, C. Kusano, Y. Takasaki, Y, Shimomoto, and T. Hirai "Amorphous Silicon Image Pickup Tubes", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961080

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