Laser Photochemical Vapor Deposition

J. G. Eden; K. K. King; E.A. P. Cheng; S. A. Piette; D. B. Geohegan

doi:10.1117/12.937295

11 March 1987 Laser Photochemical Vapor Deposition

J. G. Eden, K. K. King, E.A. P. Cheng, S. A. Piette, D. B. Geohegan

Proceedings Volume 0710, Excimer Lasers and Optics; (1987) https://doi.org/10.1117/12.937295
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

A brief overview of the status of laser photochemical vapor deposition (LPVD) will be given, with emphasis on large area processing. Recent experiments, in which chemical vapor deposition of Ge (or Si) has been "triggered" by ultraviolet (UV) laser photodissociation of GeH4 (or Si2H6), are described.

Citation Download Citation

J. G. Eden, K. K. King, E.A. P. Cheng, S. A. Piette, and D. B. Geohegan "Laser Photochemical Vapor Deposition", Proc. SPIE 0710, Excimer Lasers and Optics, (11 March 1987); https://doi.org/10.1117/12.937295

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