Numerical Modeling Of Thin Film Si:H Solar Cells

R. J. Schwartz; G. B. Turner; J. W. Park; J. L. Gray

doi:10.1117/12.940168

21 August 1987 Numerical Modeling Of Thin Film Si:H Solar Cells

R. J. Schwartz, G. B. Turner, J. W. Park, J. L. Gray

Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940168
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

A detailed numerical model incorporating exponential tail states and Gaussian-distributed dangling bond states and doping states in the gap is used to compute the performance characteristics of thin film Si:H solar cells. A one-to-one relationship between four-fold coordinated doping atoms and dangling bonds is included. A good match to experiment occurs if the front contact is treated as non-ohmic (i.e. with a non-infinite surface recombination velocity) and a critical capture cross section is taken much smaller than expected. The numerical model is also used to compute the dependence of dark conductivity on doping, which exhibits saturation at high doping levels as observed.

Citation Download Citation

R. J. Schwartz, G. B. Turner, J. W. Park, and J. L. Gray "Numerical Modeling Of Thin Film Si:H Solar Cells", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940168

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