Focused Ion Beams For Optoelectronic Technology: A Review.

P Sudraud; G Ben Assayag

doi:10.1117/12.943573

1 January 1987 Focused Ion Beams For Optoelectronic Technology: A Review.

P Sudraud, G Ben Assayag

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943573
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Focused ion beams (FIB) systems allow maskless processes as n, p doping, isolation of semiconductors and selective disordering of GaAs-AlGaAs superiattices at submicronic scale. UHV compatiblility of FIB makes MBE/FIB coupling very promissing to build lasers and integrated optoelectronic structures. FIB machining of optical structures as laser mirrors can replace classical processes, with better control and comparable performances.

Citation Download Citation

P Sudraud and G Ben Assayag "Focused Ion Beams For Optoelectronic Technology: A Review.", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943573

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available