Molecular Beam Epitaxy Of AlGaInAs For Optoelectronics

J P Praseuth; M Quillec; J M Gerard

doi:10.1117/12.943571

1 January 1987 Molecular Beam Epitaxy Of AlGaInAs For Optoelectronics

J P Praseuth, M Quillec, J M Gerard

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943571
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

In this paper, we first describe the molecular beam epitaxial (MBE) growth procedure of AlGaInAs lattice-matche to InP. Next, we present the electrical and optical properties of this system in the whole range of compositions. We then compare these results with those of the more familiar GaInAsP/InP system.

Citation Download Citation

J P Praseuth, M Quillec, and J M Gerard "Molecular Beam Epitaxy Of AlGaInAs For Optoelectronics", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943571

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