Recent Results In Semi-Insulating Indium Phosphide Crystal Growth

Y Toudic; R Coquille; M Gauneau; G Grandpierre; B Lambert

doi:10.1117/12.943566

1 January 1987 Recent Results In Semi-Insulating Indium Phosphide Crystal Growth

Y Toudic, R Coquille, M Gauneau, G Grandpierre, B Lambert

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943566
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Dislocation content and thermal stability are improved by codoping iron doped semi-insulating (SI) InP with isoelectronic impurities. By using 3d impurities (Ti or Cr) as deep compensating donors, new SI InP have been grown. The thermal stability of Ti doped InP will be shown to be superior to that of Fe or Cr doped InP.

Citation Download Citation

Y Toudic, R Coquille, M Gauneau, G Grandpierre, and B Lambert "Recent Results In Semi-Insulating Indium Phosphide Crystal Growth", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943566

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