InGaAsP/InP High-Power Single-Element Diode Lasers

C B Morrison; D Botez; L M Zinkiewicz; D Tran; E A Rezek; E R Anderson

doi:10.1117/12.944355

9 August 1988 InGaAsP/InP High-Power Single-Element Diode Lasers

C B Morrison, D Botez, L M Zinkiewicz, D Tran, E A Rezek, E R Anderson

Proceedings Volume 0893, High Power Laser Diodes and Applications; (1988) https://doi.org/10.1117/12.944355
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

Recent results of our work an InGaAsP/InP single element, diode lasers are presented. Two structures are compared: 1) the double channel planar buried heterostructure (DCPBH) and 2) the buried crescent on p-type substrates (p-BC), for power and optical-beam quality. Lifetest data for our DCPBH's is given, and compared to recently published lifetest data for p-BOs. It is clear that InGaAsP/InP lasers have high reliability at high output powers, and that buried crescent-type structures have superior optical quality in the output beam over DCPBH structures.

Citation Download Citation

C B Morrison, D Botez, L M Zinkiewicz, D Tran, E A Rezek, and E R Anderson "InGaAsP/InP High-Power Single-Element Diode Lasers", Proc. SPIE 0893, High Power Laser Diodes and Applications, (9 August 1988); https://doi.org/10.1117/12.944355

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