Comparison Of Several Resist Linewidth Fluctuation Reduction Methods From Production Viewpoints

Takeo Hashimoto; Hiroshi Yamanaka; Teruo Iino; Sakari Takahashi

doi:10.1117/12.968344

1 January 1988 Comparison Of Several Resist Linewidth Fluctuation Reduction Methods From Production Viewpoints

Takeo Hashimoto, Hiroshi Yamanaka, Teruo Iino, Sakari Takahashi

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968344
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

The linewidth fluctuation which is caused by interference effect is a very serious problem for critical dimension (CD) control. Three simple resist linewidth fluctuation reduction methods are investigated. These methods are high-contrast resists, dyed resists, and contrast enhancement material (CEM). One-micron line and space patterns of various resist thicknesses are formed on silicide by exposing with a g-line stepper and the degree of linewidth fluctuation is measured. As a r result of the investigation, the high-contrast resist is the most effective method and the degree of linewidth fluctuation of the high-contrast resist is suppressed to about 60% of that of a conventional resist. The degree of linewidth fluctuation of the dyed resist and CEM used with the conventional resist is about 65 and 80% of that of the conventional resist, respectively. Therefore it is considered that high-contrast resist is the most effective method for tight CD control which is needed for 4MDRAM-level devices.

Citation Download Citation

Takeo Hashimoto, Hiroshi Yamanaka, Teruo Iino, and Sakari Takahashi "Comparison Of Several Resist Linewidth Fluctuation Reduction Methods From Production Viewpoints", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968344

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