Critical dimension uniformity characterization of nanoimprinted trenches for high volume manufacturing qualification

H. Teyssedre; S. Landis; C. Thanner; V. Schauer; M. Laure; W. Zorbach; L. Pain; S. Bos; M. Eibelhuber; M. Wimplinger

doi:10.1117/12.2250194

20 October 2016 Critical dimension uniformity characterization of nanoimprinted trenches for high volume manufacturing qualification

H. Teyssedre, S. Landis, C. Thanner, V. Schauer, M. Laure, W. Zorbach, L. Pain, S. Bos, M. Eibelhuber, M. Wimplinger

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Proceedings Volume 10032, 32nd European Mask and Lithography Conference; 100320M (2016) https://doi.org/10.1117/12.2250194
Event: 32nd European Mask and Lithography Conference, 2016, Dresden, Germany

Abstract

In this paper a first Critical Dimension (CD) uniformity assessment onto 200 mm wafers printed with the SmartNIL^TM technology available in the HERCULES® NIL equipment platform is proposed. The work brings focus on sub micrometer resolution features with a depth between 220 and 433 nm. The silicon masters were manufactured with 193 optical lithography and dry etching. A complete Scanning Electron Microscopy (SEM) characterizations were performed over the full masters surface prior to the imprint process. Repeatability tests were performed over 25 wafers first and then on 100 wafers to collect statistics and the CD distribution within a wafer and also wafer to wafer. The data revealed that the CD is evolving imprint after imprint and an explanation based on polymer shrinkage is proposed.

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H. Teyssedre, S. Landis, C. Thanner, V. Schauer, M. Laure, W. Zorbach, L. Pain, S. Bos, M. Eibelhuber, and M. Wimplinger "Critical dimension uniformity characterization of nanoimprinted trenches for high volume manufacturing qualification", Proc. SPIE 10032, 32nd European Mask and Lithography Conference, 100320M (20 October 2016); https://doi.org/10.1117/12.2250194

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