Development of highly-efficient laser diodes emitting at around 1060nm

A. Pietrzak; R. Huelsewede; M. Zorn; J. Meusel; V. Loyo-Maldonado; J. Sebastian

doi:10.1117/12.2252348

22 February 2017 Development of highly-efficient laser diodes emitting at around 1060nm

A. Pietrzak, R. Huelsewede, M. Zorn, J. Meusel, V. Loyo-Maldonado, J. Sebastian

Proceedings Volume 10086, High-Power Diode Laser Technology XV; 100860J (2017) https://doi.org/10.1117/12.2252348
Event: SPIE LASE, 2017, San Francisco, California, United States

Abstract

An overview is presented on the recent progress in the development of high power laser bars and single emitters emitting at wavelengths around 1060 nm. The development is focused on high reliability, thermal stability and high efficiency of the laser devices.

Conference Presentation

Citation Download Citation

A. Pietrzak, R. Huelsewede, M. Zorn, J. Meusel, V. Loyo-Maldonado, and J. Sebastian "Development of highly-efficient laser diodes emitting at around 1060nm", Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860J (22 February 2017); https://doi.org/10.1117/12.2252348

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