Voltage control of surface plasmon and phonon interactions in doped semiconductor-dielectric interfaces

Mohsen Janipour; Ibrahim Burc Misirlioglu; Kursat Sendur

doi:10.1117/12.2263965

22 February 2017 Voltage control of surface plasmon and phonon interactions in doped semiconductor-dielectric interfaces

Mohsen Janipour, Ibrahim Burc Misirlioglu, Kursat Sendur

Author Affiliations +

Proceedings Volume 10098, Physics and Simulation of Optoelectronic Devices XXV; 1009808 (2017) https://doi.org/10.1117/12.2263965
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

Carrier distribution of semiconductors (SCs) differs from metals where they can give inhomogeneous carrier distributions like the classical Schottky junction. In this study, we show that the carrier distribution at a moderately doped semiconductor – dielectric (DE) interface can be tuned by applying external voltage, and then an inhomogeneous permittivity. Using the Maxwell’s equations for doped semiconductor surfaces, we illustrate the voltage controlled tunability of plasmon and phonon polaritons.

Citation Download Citation

Mohsen Janipour, Ibrahim Burc Misirlioglu, and Kursat Sendur "Voltage control of surface plasmon and phonon interactions in doped semiconductor-dielectric interfaces", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 1009808 (22 February 2017); https://doi.org/10.1117/12.2263965

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