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3 May 2017 Molecular force modeling of lithography (Conference Presentation)
Zhimin Zhu, Amanda G Riojas, Trisha May, Joyce Lowes, Nickolas L. Brakensiek, Daniel M. Sullivan
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Proceedings Volume 10147, Optical Microlithography XXX; 101470E (2017) https://doi.org/10.1117/12.2257363
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States
Abstract
Figure would be provided Figure 1 shows that the most important factor in lithography is foot contrast. Low contrast leaves a large region (CAT) where resist solubility is uncertain (chaotic area), which causes unresolvable patterns, LER/LWR issues, and pattern collapse (collapse may be due to affinity imbalance). Figure 2 shows examples of a CAT plot for two stacks of low optical reflectivity and high optical foot contrast. Low reflectivity gives higher CAT, and is further deteriorated as the image approaches the forbidden pitch, while a high foot contrast stack keeps good CAT value across all pitches. Experimental results agree well with the calculations, which will be included in the full paper. Figure 3 is a CAT contour map versus resist and Si-HM thickness for a L/P=40/100 nm pattern. Additional CAT plots will be included in the full paper. Figure 1. Optical distribution of a 40-nm dense line cross-section and resist contrast curve for CAT calculation. Figure 2. CAT plots comparing two stacks, low reflectivity and high foot contrast Figure 3. CAT contour map versus resist and Si-HM thickness.
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Zhimin Zhu, Amanda G Riojas, Trisha May, Joyce Lowes, Nickolas L. Brakensiek, and Daniel M. Sullivan "Molecular force modeling of lithography (Conference Presentation)", Proc. SPIE 10147, Optical Microlithography XXX, 101470E (3 May 2017); https://doi.org/10.1117/12.2257363
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KEYWORDS
Computed tomography
Lithography
Reflectivity
Current controlled current source
Optical lithography
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