Hotspots fixing flow in NTD process by using DTCO methodology at 10nm metal 1 layer

Xiaojing Su; Lisong Dong; Jiaxin Lin; Ying Chen; Yayi Wei; Tianchun Ye; Chunshan Du; Feng Shao; Recco Zhang; Yu Zhu; Junjiang Lei; Minghui Fan

doi:10.1117/12.2257786

28 March 2017 Hotspots fixing flow in NTD process by using DTCO methodology at 10nm metal 1 layer

Xiaojing Su, Lisong Dong, Jiaxin Lin, Ying Chen, Yayi Wei, Tianchun Ye, Chunshan Du, Feng Shao, Recco Zhang, Yu Zhu, Junjiang Lei, Minghui Fan

Author Affiliations +

Proceedings Volume 10148, Design-Process-Technology Co-optimization for Manufacturability XI; 1014817 (2017) https://doi.org/10.1117/12.2257786
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

This paper proposes a novel hotspots fixing flow, in which design rule optimization and lithography RET solution are obtained simultaneously. This flow is most effective in the early development phase, and its methodology is rooted from design technology co-optimization (DTCO). Two layout files, corresponding to separate colors of a double-pattern layer (10nm node M1), are first generated by a pattern generator, and they meet no-stitching requirements and are design rule check (DRC) clean. Then, source, mask and design rule co-optimization is done with the layouts, and the design rules are optimized to remove hotspots and enable maximum lithography process window (PW). The mask optimization (MO) in combination with cost function manipulation and design rule optimization improve the robustness of initial design rule. The application of the methodology illustrates a friendly design rule and avoids later design rework.

Citation Download Citation

Xiaojing Su, Lisong Dong, Jiaxin Lin, Ying Chen, Yayi Wei, Tianchun Ye, Chunshan Du, Feng Shao, Recco Zhang, Yu Zhu, Junjiang Lei, and Minghui Fan "Hotspots fixing flow in NTD process by using DTCO methodology at 10nm metal 1 layer", Proc. SPIE 10148, Design-Process-Technology Co-optimization for Manufacturability XI, 1014817 (28 March 2017); https://doi.org/10.1117/12.2257786

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