Photo-Electronic Optical Nonlinearities In Three- And Quasi Two-Dimensional Semiconductors

C. Klingshirn; Ch. Weber; H.E. Swoboda; R. Renner; F. A. Majumder; M. Kunz; M. Rinker; H. Schwab; M. Wegener; D. S. Chemla

doi:10.1117/12.949952

8 March 1989 Photo-Electronic Optical Nonlinearities In Three- And Quasi Two-Dimensional Semiconductors

C. Klingshirn, Ch. Weber, H.E. Swoboda, R. Renner, F. A. Majumder, M. Kunz, M. Rinker, H. Schwab, M. Wegener, D. S. Chemla

Author Affiliations +

Proceedings Volume 1017, Nonlinear Optical Materials; (1989) https://doi.org/10.1117/12.949952
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

We report here on photo-electronic nonlinearities in direct gap seminconductors, especially those connected with the transition from a low-density gas of excitons to an electron-hole plasma. We consider both three-dimensional and quasi two-dimensional semiconductors and compare both systms. Finally we show that these photo-electronic optical non-linearities can be used to obtain various types of optical bistability.

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C. Klingshirn, Ch. Weber, H.E. Swoboda, R. Renner, F. A. Majumder, M. Kunz, M. Rinker, H. Schwab, M. Wegener, and D. S. Chemla "Photo-Electronic Optical Nonlinearities In Three- And Quasi Two-Dimensional Semiconductors", Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); https://doi.org/10.1117/12.949952

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