Mg2SixSn1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics

Nikolay G. Galkin; Konstantin N. Galkin; Sergey A. Dotsenko; Igor M. Chernev; Andrei M. Maslov; L. Dózsa; B. Pécz; Z. Osváth; I. Cora; D. B. Migas; R. Kudrawiec; J. Misiewicz

doi:10.1117/12.2268266

14 December 2016 Mg₂Si_xSn_1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics

Nikolay G. Galkin, Konstantin N. Galkin, Sergey A. Dotsenko, Igor M. Chernev, Andrei M. Maslov, L. Dózsa, B. Pécz, Z. Osváth, I. Cora, D. B. Migas, R. Kudrawiec, J. Misiewicz

Author Affiliations +

Proceedings Volume 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics; 1017604 (2016) https://doi.org/10.1117/12.2268266
Event: Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 2016, Khabarovsk, Russia

Abstract

Thin (50-90 m) non-doped and doped (by Al atoms) Mg₂Sn_0.6Si_0.4 and Mg₂Sn_0.4Si_0.6films with roughness of 1.9-3.7 nm have been grown by multiple deposition and single annealing at 150 °C of multilayers formed by repetition deposition of three-layers (Si-Sn-Mg) on Si(111) p-type wafers with 45 Ω-cm resistivity. Transmission electron microscopy has shown that the first forming layer is an epitaxial layer of hex-Mg₂Sn(300) on Si(111) substrate with thickness not more than 5-7 nm. Epitaxial relationships:hex-Mg₂Sn(300)|| Si(111), hex-Mg₂Sn[001]|| Si[-112] and hex-Mg2Sn[030]||Si[110] have been found for the epitaxial layer. But inclusions of cub-Mg₂Si were also observed inside hex-Mg₂Sn layer. It was found that the remaining part of the film thickness is in amorphous state and has a layered distribution of major elements: Mg, Sn and Mg without exact chemical composition. It was established by optical spectroscopy data that both type films are semiconductor with undispersed region lower 0.18 eV with n_o= 3.59 ± 0.01, but only two direct interband transitions with energies 0.75-0.76 eV and 1.2 eV have been determined. The last interband transition has been confirmed by photoreflectance data at room temperature. Fourier transmittance spectroscopy and Raman spectroscopy data have established the formation of stannide, silicide and ternary compositions.

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Nikolay G. Galkin, Konstantin N. Galkin, Sergey A. Dotsenko, Igor M. Chernev, Andrei M. Maslov, L. Dózsa, B. Pécz, Z. Osváth, I. Cora, D. B. Migas, R. Kudrawiec, and J. Misiewicz "Mg₂Si_xSn_1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics", Proc. SPIE 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 1017604 (14 December 2016); https://doi.org/10.1117/12.2268266

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