Thin film ruthenium microstructures for transition edge sensors

A. S. Ilin; I. A. Cohn; A. N. Vystavkin; A. G. Kovalenko

doi:10.1117/12.2266275

30 December 2016 Thin film ruthenium microstructures for transition edge sensors

A. S. Ilin, I. A. Cohn, A. N. Vystavkin, A. G. Kovalenko

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102240S (2016) https://doi.org/10.1117/12.2266275
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

The superconducting properties of ruthenium (Ru) thin films and microstructures are investigated. The microstructures are used as transition edge sensors (TES), working at He-3 evaporation cryostats’ temperatures. Ruthenium is substantially inert, and the critical temperature T_c for bulk Ru samples is known from state of art to be 0.40-0.51 K. We investigated magnetron sputtered Ru thin films with thicknesses 13-300 nm on a Si substrate and electron lithography fabricated TES samples, based on the thin-film Ru microstructures. It has been found, that the T_c for the Ru thin films is 0.55-0.70 K, and the width of the transition region is 1-5 mK, and for the Ru TES T_c = 0.55 and ΔT = 4 mK. Furthermore, it was established that lithography process had no significant influence on the properties of the TES samples, so we were able to get consistent properties for several fabrication sessions. Therefore ruthenium is concluded to be a desirable material for transition edge sensors working at He-3 cryostats’ temperatures.

Citation Download Citation

A. S. Ilin, I. A. Cohn, A. N. Vystavkin, and A. G. Kovalenko "Thin film ruthenium microstructures for transition edge sensors", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240S (30 December 2016); https://doi.org/10.1117/12.2266275

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