Single-photon transmission and spectroscopy of diamond microring isomers

Alexander V. Tsukanov; Igor Yu. Kateev; Maxim S. Rogachev

doi:10.1117/12.2266829

30 December 2016 Single-photon transmission and spectroscopy of diamond microring isomers

Alexander V. Tsukanov, Igor Yu. Kateev, Maxim S. Rogachev

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102242J (2016) https://doi.org/10.1117/12.2266829
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

We study spectroscopy of a diamond three-microring isomer theoretically and optimize its design to provide good transport and dissipative properties. In a framework of the tight-binding model spectrum and electromagnetic field distribution of the isomer are calculated with account of photon energy dissipation. We employ a weak laser as a probe for the isomer spectrum. The probability of a single-photon excitation due to the laser photon injection is calculated in a steady-state regime. The spectroscopic response is represented by three clearly distinguishable peaks corresponding to isomer whispering-gallery eigenmodes and the electromagnetic field of each mode has antinodes near ring edge. Fine tuning of the microring spectrum can be provided by deposition of additional layers on the isomer surface. We obtain dependence of the eigenmode wavelength on thickness and refractive index of the additional layers. NV-center placed at the mode antinode in one of the microrings interacts with the isomer mode. This leads to anticrossing in spectroscopic response of the isomer. Due to Stark effect exited spin states of electron is strongly affected by external electric or magnetic fields. This effect can be used in designing of magnetic or electric field sensor.

Citation Download Citation

Alexander V. Tsukanov, Igor Yu. Kateev, and Maxim S. Rogachev "Single-photon transmission and spectroscopy of diamond microring isomers", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102242J (30 December 2016); https://doi.org/10.1117/12.2266829

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