Residual stresses in deposited materials

Jerome B. Cohen

doi:10.1117/12.141413

28 January 1993 Residual stresses in deposited materials

Jerome B. Cohen

Proceedings Volume 10267, Integrated Optics and Optoelectronics: A Critical Review; 1026704 (1993) https://doi.org/10.1117/12.141413
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

X-ray diffraction provides a means of measuring the residual stress tensor in films, their bonding to the substrates, yield stress, stress relaxation, and stress gradients, all without removal from the substrate. Examples of such studies are presented for interconnect material, sputtered film and epoxied layers.

These stresses often far exceed those of the same material in the bulk, even when they are microns thick. Grain boundary diffusion controls stress relaxation and, therefore, also film failure by void formation. There are no gradients through the thickness of interconnect material.

Citation Download Citation

Jerome B. Cohen "Residual stresses in deposited materials", Proc. SPIE 10267, Integrated Optics and Optoelectronics: A Critical Review, 1026704 (28 January 1993); https://doi.org/10.1117/12.141413

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