Paper
9 February 1989 Scanning Laser Photocurrent Spectroscopy Of Electrochemically Grown Bismuth Sulphide Films
Anthony R. Kucernaki, Robert Peat, David E. Williams
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Proceedings Volume 1028, Scanning Imaging; (1989) https://doi.org/10.1117/12.950346
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
The photoelectrochemical properties of semiconducting bismuth sulphide (Bi2S3) films (in contact with an aqueous electrolyte) grown on bismuth have been investigated. Using an Optically Beam Induced Contrast (OBIC) technique, it has been possible to image these films, and to identify local variations corresponding to grain boundaries and other recombination centres. It is seen that the form of these regions varies with the thickness of the film. Both object scanning and beam scanning have been investigated for generating images and these two methods are compared. Samples have also been investigated by Intensity Modulated Photocurrent Spectroscopy (IMPS). This method involves sinusoidal intensity modulation of the incident laser radiation at different frequencies, and the analysis of the resulting photocurrent response. Our extension of this method has been to map the IMPS response over the specimen surface in order to obtain specific information on local properties.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony R. Kucernaki, Robert Peat, and David E. Williams "Scanning Laser Photocurrent Spectroscopy Of Electrochemically Grown Bismuth Sulphide Films", Proc. SPIE 1028, Scanning Imaging, (9 February 1989); https://doi.org/10.1117/12.950346
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Cited by 2 scholarly publications.
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KEYWORDS
Bismuth

Electrodes

Metals

Semiconductors

Mirrors

Resistance

Modulation

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