Topography Of GaAs/AlgaAs Heterostructures Using The Lateral Photo Effect

P. F. Fontein; P. Hendriks; J. Wolter; A. Kucernak; R. Peat; D. E. Williams

doi:10.1117/12.950344

9 February 1989 Topography Of GaAs/AlgaAs Heterostructures Using The Lateral Photo Effect

P. F. Fontein, P. Hendriks, J. Wolter, A. Kucernak, R. Peat, D. E. Williams

Proceedings Volume 1028, Scanning Imaging; (1989) https://doi.org/10.1117/12.950344
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

We studied the lateral photo effect in CaAs/A1_xGa_1-xAs heterostructures both theoretically and experimentally. We observe a linear dependence of the photo voltage as a function of the position of the light spot. In our model this corresponds to a recombination length of the spatially separated electrons and holes longer than the length of the sample (1 mm). Deviations of this linear dependence are a direct indication of inhomogeneities in the conductive properties of the two-dimensional electron gas at the interface of the heterostructure. Results are shown in which long (1 mm) but very narrow cracks are seen.

Citation Download Citation

P. F. Fontein, P. Hendriks, J. Wolter, A. Kucernak, R. Peat, and D. E. Williams "Topography Of GaAs/AlgaAs Heterostructures Using The Lateral Photo Effect", Proc. SPIE 1028, Scanning Imaging, (9 February 1989); https://doi.org/10.1117/12.950344

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