Analysis of photonic spot profile converter and bridge structure on SOI platform for horizontal and vertical integration

Saikat Majumder; Amit Kr. Jha; Aishik Biswas; Debasmita Banerjee; Dipankar Ganguly; Rajib Chakraborty

doi:10.1117/12.2272565

23 August 2017 Analysis of photonic spot profile converter and bridge structure on SOI platform for horizontal and vertical integration

Saikat Majumder, Amit Kr. Jha, Aishik Biswas, Debasmita Banerjee, Dipankar Ganguly, Rajib Chakraborty

Author Affiliations +

Proceedings Volume 10382, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI; 1038203 (2017) https://doi.org/10.1117/12.2272565
Event: SPIE Optical Engineering + Applications, 2017, San Diego, California, United States

Abstract

Horizontal spot size converter required for horizontal light coupling and vertical bridge structure required for vertical integration are designed on high index contrast SOI platform in order to form more compact integrated photonic circuits. Both the structures are based on the concept of multimode interference. The spot size converter can be realized by successive integration of multimode interference structures with reducing dimension on horizontal plane, whereas the optical bridge structure consists of a number of vertical multimode interference structure connected by single mode sections. The spot size converter can be modified to a spot profile converter when the final single mode waveguide is replaced by a slot waveguide. Analysis have shown that by using three multimode sections in a spot size converter, an Gaussian input having spot diameter of 2.51 μm can be converted to a spot diameter of 0.25 μm. If the output single mode section is replaced by a slot waveguide, this input profile can be converted to a flat top profile of width 50 nm. Similarly, vertical displacement of 8μm is possible by using a combination of two multimode sections and three single mode sections in the vertical bridge structure. The analyses of these two structures are carried out for both TE and TM modes at 1550 nm wavelength using the semi analytical matrix method which is simple and fast in computation time and memory. This work shows that the matrix method is equally applicable for analysis of horizontally as well as vertically integrated photonic circuit.

Citation Download Citation

Saikat Majumder, Amit Kr. Jha, Aishik Biswas, Debasmita Banerjee, Dipankar Ganguly, and Rajib Chakraborty "Analysis of photonic spot profile converter and bridge structure on SOI platform for horizontal and vertical integration", Proc. SPIE 10382, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI, 1038203 (23 August 2017); https://doi.org/10.1117/12.2272565

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