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In this paper interband cascade type-II InAs/GaSb superlattice photodetector in temperature range from 225 K to 300 K
is investigated. The article concerns the theoretical simulations of the detectivity characteristics of cascade detector with
equal absorber regions in each stage. The obtained theoretical characteristics are comparable to experimentally
measured, assuming that transport in absorber is determined by dynamics of intrinsic carriers. The greatest fit is observed
for overlap values which increase with decreasing temperature form 0.175 eV for 225 K to 0.132 eV for 300 K.
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