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14 March 2018 Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation)
Marcel Filoche, Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu, James S. Speck, Bastien Bonef, Robert M. Farrell, Svitlana Mayboroda, Jean-Marie Lentali, Lucio Martinelli, Jacques Peretti, Claude Weisbuch
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Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105320S (2018) https://doi.org/10.1117/12.2291009
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
We present a model of carrier distribution and transport accounting for quantum localization effects in disordered semiconductor alloys. It is based on a recent mathematical theory of quantum localization which introduces a spatial function called localization landscape for carriers. These landscapes allow us to predict the localization of electron and hole quantum states, their energies, and the local densities of states. The various outputs of these landscapes can be directly implemented into a drift-diffusion model of carrier transport and into the calculation of absorption/emission transitions. This model captures the two major effects of quantum mechanics of disordered systems: the reduction of barrier height (tunneling) and lifting of energy ground states (quantum confinement), without having to solve the Schrödinger equation. Comparison with exact Schrödinger calculations in several one-dimensional structures demonstrates the excellent accuracy of the approximation provided by the landscape theory [1]. This approach is then used to describe the absorption Urbach tail in InGaN alloy quantum wells of solar cells and LEDs. The broadening of the absorption edge for quantum wells emitting from violet to green (indium content ranging from 0% to 28%) corresponds to a typical Urbach energy of 20 meV and is closely reproduced by the 3D sub-bandgap absorption based on the localization landscape theory [2]. This agreement demonstrates the applicability of the localization theory to compositional disorder effects in semiconductors. [1] M. Filoche et al., Phys. Rev. B 95, 144204 (2017) [2] M. Piccardo et al., Phys. Rev. B 95, 144205 (2017)
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Marcel Filoche, Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu, James S. Speck, Bastien Bonef, Robert M. Farrell, Svitlana Mayboroda, Jean-Marie Lentali, Lucio Martinelli, Jacques Peretti, and Claude Weisbuch "Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation)", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320S (14 March 2018); https://doi.org/10.1117/12.2291009
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KEYWORDS
Absorption
Mathematical modeling
Nanostructures
Quantum wells
Semiconductors
Systems modeling
Indium gallium nitride
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