Laser diodes using InAlGaAs multiple quantum wells intermixed to varying extent

Yousef Alahmadi; Patrick LiKam Wa

doi:10.1117/12.2311369

19 February 2018 Laser diodes using InAlGaAs multiple quantum wells intermixed to varying extent

Yousef Alahmadi, Patrick LiKam Wa

Proceedings Volume 10553, Novel In-Plane Semiconductor Lasers XVII; 1055307 (2018) https://doi.org/10.1117/12.2311369
Event: SPIE OPTO, 2018, San Francisco, California, United States

Abstract

Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-free disordering technique. Varying degrees of disordering are achieved by rapidly annealing silicon nitride-capped samples at temperatures ranging from 730°C to 830°C for 20 s. The lasing wavelength shift resulting from the intermixing, ranges between 28.2 nm and 147.2 nm. As the annealing temperature is increased, the lasing threshold currents of the fabricated waveguide lasers increase from 25mA to 45mA, while the slope efficiency decrease from 0.101 W/A to 0.068 W/A, compared to a threshold current of 27.8 mA and a slope efficiency of 0.121 W/A for an as-grown laser diode.

Citation Download Citation

Yousef Alahmadi and Patrick LiKam Wa "Laser diodes using InAlGaAs multiple quantum wells intermixed to varying extent", Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 1055307 (19 February 2018); https://doi.org/10.1117/12.2311369

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