Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures

Gregory Blachut; Stephen M. Sirard; Andrew Liang; Chris A. Mack; Michael J. Maher; Paulina A. Rincon-Delgadillo; Boon Teik Chan; Geert Mannaert; Geert Vandenberghe; C. Grant Willson; Christopher J. Ellison; Diane Hymes

doi:10.1117/12.2297489

22 March 2018 Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures

Gregory Blachut, Stephen M. Sirard, Andrew Liang, Chris A. Mack, Michael J. Maher, Paulina A. Rincon-Delgadillo, Boon Teik Chan, Geert Mannaert, Geert Vandenberghe, C. Grant Willson, Christopher J. Ellison, Diane Hymes

Author Affiliations +

Proceedings Volume 10589, Advanced Etch Technology for Nanopatterning VII; 1058907 (2018) https://doi.org/10.1117/12.2297489
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.

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Gregory Blachut, Stephen M. Sirard, Andrew Liang, Chris A. Mack, Michael J. Maher, Paulina A. Rincon-Delgadillo, Boon Teik Chan, Geert Mannaert, Geert Vandenberghe, C. Grant Willson, Christopher J. Ellison, and Diane Hymes "Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures", Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 1058907 (22 March 2018); https://doi.org/10.1117/12.2297489

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