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14 May 2018 AlInAsSb avalanche detectors for single photon counting (Conference Presentation)
Seth R. Bank
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Proceedings Volume 10659, Advanced Photon Counting Techniques XII; 106590B (2018) https://doi.org/10.1117/12.2305303
Event: SPIE Commercial + Scientific Sensing and Imaging, 2018, Orlando, FL, United States
Abstract
We review recent progress on GaSb-based AlInAsSb avalanche photodetectors (APD), including preliminary room temperature Geiger mode single photon counting and gains >1000x. AlInAsSb APDs grown digitally [1] on GaSb have recently shown tunable cutoff wavelengths across the telecommunications band, and noise comparable to that of silicon, independent of alloy composition [2]. We review this progress and describe initial Geiger mode single photon counting success at room temperature. Geiger performance of an Al0.7In0.3As0.3Sb0.7 APD was characterized with a capacitance-balanced gated quenching circuit in which an avalanche event was quenched by the trailing edge of the gate pulse. The width of driving gate was 5 ns, and repetition rate was 1 MHz. The excess bias was varied from 0.3% to 1% of breakdown voltage. Both photon-induced breakdown probability and dark count probability increase with excess bias until photon-induced breakdown probability saturates at 55%, which is due to high dark count rate. The dark count probability per gate was as high as 60%, which is consistent with the 0.17-nA primary dark current. [1] Maddox, March, Bank, ACS Crystal Growth & Design, vol. 16, no. 7, pp. 3582–3586, June 2016. [2] Woodson, Ren, Maddox, Chen, Bank, Campbell, Appl. Phys. Lett., vol. 108, no. 8, pp. 081102, Feb. 2016.
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Seth R. Bank "AlInAsSb avalanche detectors for single photon counting (Conference Presentation)", Proc. SPIE 10659, Advanced Photon Counting Techniques XII, 106590B (14 May 2018); https://doi.org/10.1117/12.2305303
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KEYWORDS
Single photon
Avalanche photodetectors
Sensors
Quenching (fluorescence)
Crystals
Gallium antimonide
Silicon
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