Broadband and low-noise terahertz-wave detection by InP/InGaAs Fermi-level managed barrier diode

Hiroshi Ito; Tadao Ishibashi

doi:10.1117/12.2320026

14 September 2018 Broadband and low-noise terahertz-wave detection by InP/InGaAs Fermi-level managed barrier diode

Hiroshi Ito, Tadao Ishibashi

Proceedings Volume 10756, Terahertz Emitters, Receivers, and Applications IX; 107560M (2018) https://doi.org/10.1117/12.2320026
Event: SPIE Optical Engineering + Applications, 2018, San Diego, California, United States

Abstract

A hetero-barrier rectifier, Fermi-level managed barrier (FMB) diode, was developed for broadband and low-noise THzwave detection at room temperature. The barrier height at the InP/InGaAs interface was controlled by the doping in an n-type InGaAs anode layer so that a very low height barrier could be attained for obtaining a small intrinsic differential resistance and a large output current density under a zero-biased condition. The fabricated module integrating a pre-amplifier could detect signals in a wide frequency range from 160 GHz to 1.4 THz with a very low noise equivalent power (NEP) of 3 × 10^-12 W/ √Hz at 300 GHz in the square-law detection mode. The NEP in the homodyne detection mode was even lower at 1.6 ×10^-17 W/Hz with a local oscillator power of only 5 ×10^-7 W at 300 GHz. A linear detector array consisting of 100 zero-biased FMB diodes was also developed for the THz imaging. A short-time imaging at 315 GHz was accomplished with a near-diffraction-limited resolution of about 0.7 mm.

Citation Download Citation

Hiroshi Ito and Tadao Ishibashi "Broadband and low-noise terahertz-wave detection by InP/InGaAs Fermi-level managed barrier diode", Proc. SPIE 10756, Terahertz Emitters, Receivers, and Applications IX, 107560M (14 September 2018); https://doi.org/10.1117/12.2320026

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