High performance N-type organic thin-film transistor based on biocompatible silk fibroin: poly(vinyl alcohol)-blended dielectric layer

Xinming Zhuang; Xiaolin Wang; Huidong Fan; Junsheng Yu

doi:10.1117/12.2506445

8 February 2019 High performance N-type organic thin-film transistor based on biocompatible silk fibroin: poly(vinyl alcohol)-blended dielectric layer

Xinming Zhuang, Xiaolin Wang, Huidong Fan, Junsheng Yu

Author Affiliations +

Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 1084314 (2019) https://doi.org/10.1117/12.2506445
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China

Abstract

We investigated the effect of biocompatible silk fibroin (SF):poly(vinyl alcohol) (PVA) blended dielectric layers on the characteristics of N-type organic thin-film transistors (OTFTs). The OTFT with high performance and low driving voltage (4 V) are obtained. Compared with those with pure SF dielectric layer, a high on/off ratio of ∼ 10³ and enhanced field-effect mobility of 0.203 cm²/Vs of OTFTs were obtained, by controlling the weight ratio of SF:PVA blends to 7:5. The mechanism of performance improvement of OTFT was systematically studied through the morphology characterization of dielectrics by utilizing atom force microscopy and electrical characterization. The smooth and homogeneous morphology of blend dielectrics having lower charge carrier trap density, is the main reason for the OTFTs based on SF: PVA-blended dielectric exhibited a higher performance than those based on pure SF dielectric.

Citation Download Citation

Xinming Zhuang, Xiaolin Wang, Huidong Fan, and Junsheng Yu "High performance N-type organic thin-film transistor based on biocompatible silk fibroin: poly(vinyl alcohol)-blended dielectric layer", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 1084314 (8 February 2019); https://doi.org/10.1117/12.2506445

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