GeSn on Si avalanche photodiodes for short wave infrared detection

Dongliang Zhang; Xiaoyan Hu; Dachuan Liu; Xiao Lin; Weiping Wang; Ziyu Ding; Zhiqiang Wang; Buwen Cheng; Chunlai Xue

doi:10.1117/12.2504669

12 December 2018 GeSn on Si avalanche photodiodes for short wave infrared detection

Dongliang Zhang, Xiaoyan Hu, Dachuan Liu, Xiao Lin, Weiping Wang, Ziyu Ding, Zhiqiang Wang, Buwen Cheng, Chunlai Xue

Proceedings Volume 10846, Optical Sensing and Imaging Technologies and Applications; 108461B (2018) https://doi.org/10.1117/12.2504669
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China

Abstract

A mesa-type normal incidence separate-absorption-charge-multiplication (SACM) Ge_0.95Sn_0.05/Si avalanche photodiode (APD) was fabricated. The 60-μm-diameter avalanche photodiode achieved a responsivity of ~5A/W (gain=24) and ~3.1A/W (gain=20) at 98% breakdown voltage (-14.2V) under 1310nm and 1550nm illumination respectively with a low dark current of 10μA. The −3 dB bandwidth for a 60-μm-diameter APD is about 1-1.25GHz for gains from 5 to 20, resulting in a gain-bandwidth product of 25GHz for a C-band communication wavelength of 1550nm.

Citation Download Citation

Dongliang Zhang, Xiaoyan Hu, Dachuan Liu, Xiao Lin, Weiping Wang, Ziyu Ding, Zhiqiang Wang, Buwen Cheng, and Chunlai Xue "GeSn on Si avalanche photodiodes for short wave infrared detection", Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 108461B (12 December 2018); https://doi.org/10.1117/12.2504669

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