Photoluminescence investigation of InGaAs surface quantum dots (Conference Presentation)

Qing Yuan; Baolai Liang; Ying Wang; Xiaoli Li; Qinglin Guo; Shufang Wang; Guangsheng Fu; Yuriy Mazur; Morgan Ware; Gregory Salamo

doi:10.1117/12.2509218

4 March 2019 Photoluminescence investigation of InGaAs surface quantum dots (Conference Presentation)

Qing Yuan, Baolai Liang, Ying Wang, Xiaoli Li, Qinglin Guo, Shufang Wang, Guangsheng Fu, Yuriy Mazur, Morgan Ware, Gregory Salamo

Author Affiliations +

Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI; 109290L (2019) https://doi.org/10.1117/12.2509218
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

The InGaAs surface quantum dots grown on GaAs surface without a capping layer (surface quantum dots, SQDs) are expected to play an important role for sensor applications due to their special surface sensitive properties. In this research, we investigated the photoluminescence (PL) characteristics of such In0.35Ga0.65As/GaAs SQDs with a layer of buried InGaAs QDs (BQDs) as reference. The uncapped InGaAs SQDs are integrated into a hybrid nanostructure with SQDs and buried quantum dots (BQDs) spaced by a 70 nm GaAs layer. Due to this thick GaAs spacer, we assert there is no quantum coupling between the SQDs and BQDs so that each layer of QDs has independent emission. The PL spectra show that the SQD PL intensity is far less than BQDs at low temperature but exceeds BQDs at high temperature, indicating a possible carrier transfer between the SQDs and surface states. With increasing excitation intensity, the PL spectra show clearly broaden on the high energy side and a blueshift for both the SQDs and BQDs. Therefore, there is lateral carrier transfer among each layer of QDs due to their high areal density. The intra-layer carrier transfer among SQDs as well as the inter-layer carrier transfer between SQDs and surface states attribute to carriers dynamics that make the SQDs having optical performance very different from the BQDs.

Conference Presentation

Citation Download Citation

Qing Yuan, Baolai Liang, Ying Wang, Xiaoli Li, Qinglin Guo, Shufang Wang, Guangsheng Fu, Yuriy Mazur, Morgan Ware, and Gregory Salamo "Photoluminescence investigation of InGaAs surface quantum dots (Conference Presentation)", Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 109290L (4 March 2019); https://doi.org/10.1117/12.2509218

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Indium gallium arsenide

Quantum dots

Luminescence

Gallium arsenide

Carrier dynamics

Nanostructures

Sensors

Keywords/Phrases

Search In:

Publication Years