Doping technologies for InP membranes on silicon for nanolasers

Andrey Marchevsky; Jesper Mørk; Kresten Yvind

doi:10.1117/12.2509487

1 March 2019 Doping technologies for InP membranes on silicon for nanolasers

Andrey Marchevsky, Jesper Mørk, Kresten Yvind

Proceedings Volume 10939, Novel In-Plane Semiconductor Lasers XVIII; 109390U (2019) https://doi.org/10.1117/12.2509487
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2” InP to 4” SiO₂/Si direct bonding, and several cycles of DUV lithography. Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10¹⁸ cm^-3 for both Zndiffused p-InP and Si-implanted n-InP.

Citation Download Citation

Andrey Marchevsky, Jesper Mørk, and Kresten Yvind "Doping technologies for InP membranes on silicon for nanolasers", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390U (1 March 2019); https://doi.org/10.1117/12.2509487

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