Development of surface profile measurement system based on super luminescent diode light source

Dian Bian; Xinyu Yan; Yang Lu; Liandong Yu

doi:10.1117/12.2511824

7 March 2019 Development of surface profile measurement system based on super luminescent diode light source

Dian Bian, Xinyu Yan, Yang Lu, Liandong Yu

Proceedings Volume 11053, Tenth International Symposium on Precision Engineering Measurements and Instrumentation; 110530K (2019) https://doi.org/10.1117/12.2511824
Event: 10th International Symposium on Precision Engineering Measurements and Instrumentation (ISPEMI 2018), 2018, Kunming, China

Abstract

This paper dedicated to the development of a surface profile measurement system based on the SLD (Super Luminescent Diode) light source for silicon wafer. The silicon wafer is very important as a substrate of semiconductor products such as integrated circuit (IC) chips, light emitting diodes (LEDs), solar cells and MEMS devices ^[1]. In this paper, Michelson interferometer is used to generate double beams in order to achieve interference. According to the acquired interference fringe image, we obtain the surface profile of the tested silicon wafer. As a light source, SLD has good spatial coherence and due to its higher transmittance to silicon wafers than other wavelength sources, high fringe visibility can be achieved. It can also perform a full scan in a larger step and achieve rapid on-line measurement of the target surface.

Citation Download Citation

Dian Bian, Xinyu Yan, Yang Lu, and Liandong Yu "Development of surface profile measurement system based on super luminescent diode light source", Proc. SPIE 11053, Tenth International Symposium on Precision Engineering Measurements and Instrumentation, 110530K (7 March 2019); https://doi.org/10.1117/12.2511824

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