Open Access Paper
27 June 2019 Lifetime test on EUV photomask with EBL2
Chien-Ching Wu, Markus Bender, Rik Jonckheere, Frank Scholze, Herman Bekman, Michel van Putten, Rory de Zanger, Rob Ebeling, Jeroen Westerhout, Kyri Nicolai, Jacqueline van Veldhoven, Véronique de Rooij-Lohmann, Olaf Kievit, Alex Deutz
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Abstract
TNO has built EBL2, an EUV exposure facility equipped with an in vacuo X-ray photoelectron spectroscopy setup (XPS) and an in-situ ellipsometer. EBL2 enables lifetime testing of EUV optics, photomasks, pellicles and related components under development in relevant EUV scanner and source conditions, which was previously not available to industry. This lifetime testing can help the industry to prepare for high volume production using EUV lithography by bringing forward information about material behavior which facilitates the development cycle. This paper describes an EUV photomask lifetime test performed at EBL2. The mask was exposed to different EUV doses under a controlled gas and temperature environment. To investigate how EUV light interacts with the mask, various analysis techniques were applied before and after EUV exposure. In-situ XPS was used to investigate elemental compositions of the mask surface. An ex-situ critical dimension scanning electron microscope (CD-SEM) and an atomic force microscope (AFM) were used to explore the impact of EUV light on critical dimensions (CD) and feature profiles. In addition, EUV reflectometry (EUVR) was used to investigate the change of reflectivity after EUV exposures. The exposure conditions are reported, as well as an analysis of the effects observed.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chien-Ching Wu, Markus Bender, Rik Jonckheere, Frank Scholze, Herman Bekman, Michel van Putten, Rory de Zanger, Rob Ebeling, Jeroen Westerhout, Kyri Nicolai, Jacqueline van Veldhoven, Véronique de Rooij-Lohmann, Olaf Kievit, and Alex Deutz "Lifetime test on EUV photomask with EBL2", Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 111780E (27 June 2019); https://doi.org/10.1117/12.2537734
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Cited by 2 scholarly publications.
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KEYWORDS
Extreme ultraviolet lithography

Photomasks

Extreme ultraviolet

Scanners

Reflectivity

Oxidation

Ruthenium

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