Paper
31 December 2019 Graphene on silicon-nitride photodetector
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Abstract
Even though graphene is a gapless material, it demonstrates strong interband absorption from a broad range of wavelengths between VIS and NIR. Recent photocurrent graphene-based detectors demonstrated strong photoresponse signal near the graphene/metal boundaries. To increase the response time of photodetectors, the use of low thermal capacity materials and structures are required. SiN membranes are good candidates due to their high-quality factor (up to 106-107), low mass and excellent optical properties. The motivation for this study was based on a lack of any suitable solution for nano-dimension form factor detector that could be integrated into 3D photonic bandgap structures for real-time internal characterization.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tania Moein, Darius Gailevicius, Tomas Katkus, Soon Hock Ng, Stefan Lundgaard, Simonas Varapnickas, David J. Moss, Hamza Kurt, Vygantas Mizeikis, Kestutis Staliunas, and Mangirdas Malinauskas "Graphene on silicon-nitride photodetector", Proc. SPIE 11201, SPIE Micro + Nano Materials, Devices, and Applications 2019, 1120105 (31 December 2019); https://doi.org/10.1117/12.2543391
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KEYWORDS
Photodetectors

Graphene

Silicon

Sensors

Lithography

Metals

Near infrared

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