Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs

Fuminobu Hamano; Akira Mizutani; Kaname Imokawa; Daisuke Nakamura; Tetsuya Goto; Hiroshi Ikenoue

doi:10.1117/12.2544910

22 January 2020 Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs

Fuminobu Hamano, Akira Mizutani, Kaname Imokawa, Daisuke Nakamura, Tetsuya Goto, Hiroshi Ikenoue

Proceedings Volume 11268, Laser-based Micro- and Nanoprocessing XIV; 1126810 (2020) https://doi.org/10.1117/12.2544910
Event: SPIE LASE, 2020, San Francisco, California, United States

Abstract

Low-temperature poly-Si (LTPS) thin films formed by excimer laser annealing (ELA) are used as the channel material for thin film transistors (TFTs), which have an application as switching devices in flat panel displays. It is well known that one of the major problems in TFT manufacturing is the prominent ridges that form on LTPS thin films after ELA due to volume expansion by crystallization, which in turn induces gate leakage current in the TFTs. In this presentation, we report on the use of additional laser irradiation to reduce the height of the ridges and resulting changes in the electrical properties of LTPS-TFTs.

Conference Presentation

Citation Download Citation

Fuminobu Hamano, Akira Mizutani, Kaname Imokawa, Daisuke Nakamura, Tetsuya Goto, and Hiroshi Ikenoue "Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs", Proc. SPIE 11268, Laser-based Micro- and Nanoprocessing XIV, 1126810 (22 January 2020); https://doi.org/10.1117/12.2544910

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