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10 March 2020 Visualization of defects in nitride semiconductors by electron channeling (Conference Presentation)
Carol Trager-Cowan, Aeshah Alasmari, William Avis, Jochen Bruckbauer, Paul Edwards, Ben Hourahine, Albes Kotzai, Gunnar Kusch, Robert Martin, Ryan McDermott, G. Naresh-Kumar, M. Nouf-Allehiani, Elena Pascal, David Thomson, Dale Waters, Peter Parbrook, Arantxa Vilalta-Clemente, Angus Wilkinson, Ken Mingard, Aimo Winkelmann
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Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 1128008 (2020) https://doi.org/10.1117/12.2544228
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
The diffraction based scanning electron microscopy (SEM) technique of electron channeling contrast imaging (ECCI) provides rapid and non-destructive information on defects on length scales from tens of nanometres to tens of micrometres. ECCI may be complemented by electron backscatter diffraction (EBSD) and hyperspectral cathodoluminescence imaging (CL). EBSD provides orientation, phase, polarity and strain information, whilst CL reveals the influence of phase, composition, strain and defects on luminescence. I will discuss our recent investigations of phase, composition and polarity, the type, density and distribution of defects and the distribution of strain in a range of nitride semiconductor structures.
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Carol Trager-Cowan, Aeshah Alasmari, William Avis, Jochen Bruckbauer, Paul Edwards, Ben Hourahine, Albes Kotzai, Gunnar Kusch, Robert Martin, Ryan McDermott, G. Naresh-Kumar, M. Nouf-Allehiani, Elena Pascal, David Thomson, Dale Waters, Peter Parbrook, Arantxa Vilalta-Clemente, Angus Wilkinson, Ken Mingard, and Aimo Winkelmann "Visualization of defects in nitride semiconductors by electron channeling (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128008 (10 March 2020); https://doi.org/10.1117/12.2544228
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KEYWORDS
Semiconductors
Visualization
Scanning electron microscopy
Crystals
Diffraction
Gallium nitride
Backscatter
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