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We present the state-of-the-art electrically pumped single transverse-mode superluminescent diodes (SLDs) emitting in the 2 – 3 µm wavelength range at room temperature. The structures were fabricated by MBE to include two GaSb-based quantum wells and a double-pass ridge waveguide architecture. A cavity suppression element was used for avoiding lasing at high current. Highest power was obtained for SLDs around 2 µm, exceeding 120 mW in CW and > 300 mW in pulsed operation, with spectral width of ~ 40 nm. SLDs around 2.60 µm emitted a record 15 mW output power and exhibited ~ 80 nm spectral width under pulsed operation. Wavelength extension towards 3 µm is discussed.
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Nouman Zia, Jukka Viheriala, Eero Koivusalo, Antti Aho, Mircea Guina, "Progress in high-power broadband GaSb-based superluminescent diodes emitting at 2-3 um (Conference Presentation)," Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 1130210 (9 March 2020); https://doi.org/10.1117/12.2544007