High-order field distortion correction using standalone alignment technology with modeling and sampling optimization

Takehisa Yahiro; Katsushi Makino; Haruki Saito; Steven Tottewitz; Boris Habets; Patrick Lomtscher; Jiro Hanaue

doi:10.1117/12.2551603

20 March 2020 High-order field distortion correction using standalone alignment technology with modeling and sampling optimization

Takehisa Yahiro, Katsushi Makino, Haruki Saito, Steven Tottewitz, Boris Habets, Patrick Lomtscher, Jiro Hanaue

Author Affiliations +

Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 113251Y (2020) https://doi.org/10.1117/12.2551603
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

A standalone alignment technology was developed as a fundamental solution to improve on-product overlay (OPO). It enables high performance alignment measurements, and delivers state-of-the-art feed forward corrections to exposure scanner. Dense alignment sampling and high-order field distortion correction is effective for scanner fingerprint matching and for heat related field distortions. A modeling and sampling optimization software is a powerful tool for dense sampling and high-order overlay correction with minimal throughput loss. We performed an overlay experiment using the standalone alignment technology coupled with a modeling and sampling optimization software, which demonstrates on-product overlay improvement potential for next generation manufacturing accuracy and productivity challenges.

Citation Download Citation

Takehisa Yahiro, Katsushi Makino, Haruki Saito, Steven Tottewitz, Boris Habets, Patrick Lomtscher, and Jiro Hanaue "High-order field distortion correction using standalone alignment technology with modeling and sampling optimization", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251Y (20 March 2020); https://doi.org/10.1117/12.2551603

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