UTC-PD-integrated HEMT for optical-to-sub-terahertz carrier frequency down-conversion

A. Satou; K. Nishimura; Y. Omori; T. Hosotani; K. Iwatsuki; T. Otsuji

doi:10.1117/12.2557170

24 April 2020 UTC-PD-integrated HEMT for optical-to-sub-terahertz carrier frequency down-conversion

A. Satou, K. Nishimura, Y. Omori, T. Hosotani, K. Iwatsuki, T. Otsuji

Proceedings Volume 11390, Next-Generation Spectroscopic Technologies XIII; 113900M (2020) https://doi.org/10.1117/12.2557170
Event: SPIE Defense + Commercial Sensing, 2020, Online Only

Abstract

We developed a novel InGaAs-channel high-electron-mobility transistor (HEMT) integrated with a uni-traveling-carrier photodiode (UTC-PD) structure for the optical-to-wireless carrier frequency down-conversion. We experimentally demonstrated that the output intensity of the down-converted signal is significantly enhanced by 34 dB compared with a standard HEMT, owning to the integration of the UTC-PD structure. We also verified the feasibility of the UTC-PDintegrated HEMT for practical use in the future full coherent network systems.

Conference Presentation

Citation Download Citation

A. Satou, K. Nishimura, Y. Omori, T. Hosotani, K. Iwatsuki, and T. Otsuji "UTC-PD-integrated HEMT for optical-to-sub-terahertz carrier frequency down-conversion", Proc. SPIE 11390, Next-Generation Spectroscopic Technologies XIII, 113900M (24 April 2020); https://doi.org/10.1117/12.2557170

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