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20 August 2020 Imaging strain-localized exciton states in 2D semiconductors at room temperature
P. James Schuck
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Proceedings Volume 11468, Enhanced Spectroscopies and Nanoimaging 2020; 1146809 (2020) https://doi.org/10.1117/12.2568221
Event: SPIE Nanoscience + Engineering, 2020, Online Only
Abstract
In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopy of excitons in nanobubbles of localized strain in monolayer WSe2 with atomistic structural models to elucidate how strain induces nanoscale confinement potentials that give rise to highly localized exciton states in 2D semiconductors.
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P. James Schuck "Imaging strain-localized exciton states in 2D semiconductors at room temperature", Proc. SPIE 11468, Enhanced Spectroscopies and Nanoimaging 2020, 1146809 (20 August 2020); https://doi.org/10.1117/12.2568221
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KEYWORDS
Excitons
Semiconductors
Imaging spectroscopy
Crystals
Single photon
Spectroscopy
Transition metals
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