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20 August 2020 Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors
Pierre Renucci, Xiaodie Xue, Laipan Zhu, Wei Huang, Yu Liu, Yang Zhang, Xiaolin Zeng, Jing Wu, Bo Xu, Zhanguo Wang, Yonghai Chen, Weifeng Zhang, Xavier Marie, Yuan Lu
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Proceedings Volume 11470, Spintronics XIII; 114700Y (2020) https://doi.org/10.1117/12.2570792
Event: SPIE Nanoscience + Engineering, 2020, Online Only
Abstract
We have measured a helicity-dependent photocurrent at zero external magnetic field in a device based on a semiconductor quantum well embedded in a p-i-n junction. The device is excited under vertical incidence with circularly polarized light. The spin filtering effect is evidenced in the range 77–300 K at B = 0 owing to a CoFeB/MgO spin filter with out-of-plane magnetization in remanence. The helicity-dependent photocurrent is explored as a function of the temperature and bias. These characteristics are compared with those of a spin photocurrent device with in-plane magnetized CoFeB/MgO spin filter, excited under oblique incidence with circularly polarized light. In contrast to the in-plane spin filter device, the circularly polarized light asymmetry of the photocurrent in the out-of-plane device depends weakly on the external bias. This may be attributed to the large spin relaxation anisotropy in III-V zinc-blende quantum wells in the presence of a vertical electric field.
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Pierre Renucci, Xiaodie Xue, Laipan Zhu, Wei Huang, Yu Liu, Yang Zhang, Xiaolin Zeng, Jing Wu, Bo Xu, Zhanguo Wang, Yonghai Chen, Weifeng Zhang, Xavier Marie, and Yuan Lu "Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors", Proc. SPIE 11470, Spintronics XIII, 114700Y (20 August 2020); https://doi.org/10.1117/12.2570792
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KEYWORDS
Sensors
Magnetic sensors
Quantum wells
Magnetism
Photodetectors
Semiconductors
Electrodes
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