Presentation
20 August 2020 Towards barrier-free contacts to monolayer transition metal dichalcogenides
Sachin Gupta, F. Rortais, R. Ohshima, Y. Ando, Y. Miyata, M. Shiraishi
Author Affiliations +
Abstract
Broken inversion symmetry and time-reversal symmetry along with large spin-orbit interactions in monolayer transition metal dichalcogenides (TMDs) make them ideal candidates for novel valleytronic applications. Although successful spin transport and detection are very crucial for spintronic/valleytronic devices, electrical spin transport and spin detection due to spin-valley polarization in TMDs is still lacking. An electrical realization of spin transport and detection in TMDs demand perpendicular magnetic anisotropic (PMA) electrodes with very small Schottky barrier height (SBH). Furthermore, formation of large SBH at the metal/TMDs interfaces limits the exploitation and integration of TMDs in spintronic/valleytronic devices. In this work, we develop ferromagnetic electrodes and integrate them in MoS2 field-effect transistors. We studied the transfer characteristics of these devices and estimated SBH. SBHs extracted in these devices were found to be very small.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sachin Gupta, F. Rortais, R. Ohshima, Y. Ando, Y. Miyata, and M. Shiraishi "Towards barrier-free contacts to monolayer transition metal dichalcogenides", Proc. SPIE 11470, Spintronics XIII, 114702O (20 August 2020); https://doi.org/10.1117/12.2567327
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KEYWORDS
Transition metals

Electrodes

Magnetism

Fermium

Ferromagnetics

Field effect transistors

Frequency modulation

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