Presentation
20 August 2020 Low-threshold ASE and DFB lasers using quasi-2D perovskites with highly oriented nanocrystals
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Abstract
In this work, we demonstrated that through the addition of large organic cation PEABr, the quality of cesium lead halide thin films has been enhanced by controlling the crystallization process and thus the domain size and morphology. As a result, by increasing the PEABr concentration to 40%, the perovskite thin films with a small domain size, highly oriented crystal structure and low defect density demonstrated a lowest amplified spontaneous emission threshold of 7 µJ/cm2. However, further increasing PEABr concentration will result in a slower energy transfer, which limits the population inversion process and thus showed a higher ASE threshold. Using this strategy, by tuning the halide ratio, the ASE emissions were observed over the broad visible range (from 490 nm to 680 nm), demonstrating its wide wavelength-tunability.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Lei, Dovletgeldi Seyitliyev, Qi Dong, Samuel Stuard, Siliang He, Juliana Mendes, Harald W. Ade, Kenan Gundogdu, and Franky So "Low-threshold ASE and DFB lasers using quasi-2D perovskites with highly oriented nanocrystals", Proc. SPIE 11473, Organic and Hybrid Light Emitting Materials and Devices XXIV, 1147312 (20 August 2020); https://doi.org/10.1117/12.2568525
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KEYWORDS
Perovskite

Thin films

Cesium

Lead

Crystals

Optical pumping

Semiconductors

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